分布式半导体晶体管SAW放大器的设计

Y. Aoki, H. Yoshida, K. Koh, C. Kaneshiro, K. Hohkawa
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引用次数: 0

摘要

在本文中,我们提出了一种新型SAW放大器的设计,该放大器由多条带分接电极和GaAs场效应晶体管放大器组成。利用通用电路模拟器,分析了声表面波放大器的频率特性。采用差分运算的声表面波放大器比不采用差分运算的声表面波放大器表现出更好的宽带频率特性。我们还通过改变分接电极间距和SAW与FET之间的阻抗匹配条件来研究频率特性。结果表明,声表面波放大器适用于宽带通信系统和信号处理系统。
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Design of SAW amplifier with distributed semiconductor transistor
In this paper, we present the design of a novel SAW amplifier that consists of multi-stripe tapping electrodes and a GaAs FET amplifier. Using a general circuit simulator, we analyse the frequency characteristics of the SAW amplifier. The SAW amplifier with differential operation shows wideband frequency characteristics better than that without differential operation. We also investigate the frequency characteristics by changing tapping electrode pitches and the impedance matching condition between SAW and FET. These results confirm that the SAW amplifier is applicable to wideband communication systems and signal processing systems.
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