Y. Shimizu, Y. Nakano, Y. Kono, N. Sakurai, Y. Sugawara, S. Otaka
{"title":"具有过流保护功能的高性能智能IGBT","authors":"Y. Shimizu, Y. Nakano, Y. Kono, N. Sakurai, Y. Sugawara, S. Otaka","doi":"10.1109/ISPSD.1994.583640","DOIUrl":null,"url":null,"abstract":"We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm/sup 2/. The turn-off fall time is 0.28 /spl mu/s. This trade-off value is almost at the limit of this class of planer-gate IGBT.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"A high performance intelligent IGBT with overcurrent protection\",\"authors\":\"Y. Shimizu, Y. Nakano, Y. Kono, N. Sakurai, Y. Sugawara, S. Otaka\",\"doi\":\"10.1109/ISPSD.1994.583640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm/sup 2/. The turn-off fall time is 0.28 /spl mu/s. This trade-off value is almost at the limit of this class of planer-gate IGBT.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high performance intelligent IGBT with overcurrent protection
We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm/sup 2/. The turn-off fall time is 0.28 /spl mu/s. This trade-off value is almost at the limit of this class of planer-gate IGBT.
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