633 nm AlGaInP/GaInP应变量子阱激光器阈值电流密度的计算

K. Domen, H. Ishikawa, M. Sugawara, M. Kondo, A. Furuya, T. Tanahashi
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摘要

利用考虑SO波段效应的6 × 6 Luttinger-Kohn哈密顿量1,我们计算了Ga成分(x)为0.46 ~ 0.57的(Alo~7Ga0~3~0~51n0~5P/GaxInl-xP QWs的价带,对应于0.40%压缩到0.43%拉伸的应变范围。我们改变了阱宽度,直到带隙能量等于1.96 eV,即633 nm。为了比较,我们还使用没有SO带效应的4 x 4哈密顿量计算了价带。在拉伸应变作用下,最上面的条带呈光孔状,但却呈光孔状。带着SO乐队。我们发现这种耦合扩大了最顶层的k矢量色散,增加了面内有效质量。压缩应变作用下,由于最上层重空穴带与LH带和SO带混合较少,有效质量较小。为了得到模态增益Gln与电流密度J之间的关系,我们计算了光增益和。从上述价带的辐射寿命,假设一个抛物线传导带。我们发现在拉伸应变下的结构比在压缩应变下的结构具有更大的透明电流密度Ju和更大的差分增益。在拉伸应变下的结构中观察到的这些特性是由于GaInP中的自旋轨道分裂很小,因为大的有效质量会导致大的Jt和大的微分增益。因此,压缩应变的Gm曲线与拉伸应变的Gm曲线相交。在0.40%压缩应变与0.43%拉伸应变的对比中,压缩应变小于25 cm-l的Gm大于拉伸应变,大于25 cm-l的Gm则相反。因此,我们发现,对于具有低阈值增益的激光器,例如具有高反射率光学涂层的激光器,压缩应变可以有效地降低Jth。相反,拉伸应变在具有高阈值增益的激光器中更有效,例如具有可饱和吸收器的激光器。在具有大自旋轨道分裂的GaInAsP长波长应变QW激光器中还没有看到这些SO带效应。
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Calculation of threshold current density in 633-nm AlGaInP/GaInP strained quantum well lasers
Using a 6 x 6 Luttinger-Kohn Hamiltonian1 considering the SO band effects, we calculated valence bands in (Alo~7Ga0~3~0~51n0~5P/GaxInl-xP QWs with Ga compositions (x) of 0.46 to 0.57, corresponding to strains ranging from 0.40% compressive to 0.43% tensile. We varied the well width until the bandgap energy equaled 1.96 eV, or 633 nm. For comparison, we also calculated the valence bands using a 4 x 4 Hamiltonian without SO band effects. Under tensile strain, the topmost band is light-hole (LH) like, but is coup!ed with the SO band. We found that this coupling widens the k-vector dispersion of the topmost band, and increeases the in-plane effective mass. Under compressive strain, the effective mass is smaller, due to less mixing of the topmost heavy hole band with both the LH band and the SO band. To obtain the relationship between modal gain Gln and current density J, we calculated the optical gain and. radiative lifetime from the valence band described above, assuming a parabolic conduction band. We found that structures under tensile strain have a larger transparent current density Ju and a larger differential gain than those under compressive strain. Those properties observed in structures under tensile strain result from the small spinorbit splitting in GaInP, because a large effective mass causes a large Jt, and a large differential gain. Therefore, the Gm curve for compressive strain crosses that for tensile. Comparing 0.40% compressive with 0.43% tensile strain, Gm for compressive is larger than that for tensile below Gm of 25 cm-l, while the opposite is true above 25 cm-l. As a result, we found that, for lasers with low threshold gain such as those with high-reflectivity optical coatings, compressive strain is effective in reducing Jth. In contrast, tensile strain is more effective in lasers with high threshold gain such as those with a saturatable absorber. These SO band effects have not been seen in GaInAsP long-wavelength strained QW lasers with a large spin-orbit splitting2.
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