过滤等离子体通量的真空弧膜沉积装置

V. Khoroshikh, S. A. Leonov, V. A. Belous
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引用次数: 0

摘要

设计了一种真空电弧无液滴薄膜沉积装置。它包含两个直线等离子体源,在其圆柱形阳极上放置了圆盘滤波屏蔽。所研究的装置变体在每个等离子体源的电弧电流为100 a时提供2.4 a水平的离子电流。在高度为50 mm、直径为45 mm的旋转圆柱细部上,氮化钛薄膜的沉积速率可达5 /spl mu/m/h。结果还表明,该装置允许接收厚度达3微米的涂层,其表面的平均微粗糙度约为0.08-0.09微米。
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Installation for vacuum-arc film deposition by filtered plasma fluxes
An installation for vacuum-arc droplet-free film deposition was designed. It contains two rectilinear plasma sources, in whose cylindrical anodes the disk filtering shields are placed. The investigated variant of installation provides ion current at a level 2.4 A at a current of the arc in each of plasma sources 100 A. The deposition rate of 5 /spl mu/m/h for titanium nitride films was achieved over the rotating cylindrical detail of height 50 mm and diameter of 45 mm. It is shown also that the installation allows to receive coatings by thickness up to 3 microns at the average size of microroughnesses on its surface about 0.08-0.09 microns.
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