1.57GHz CMOS低噪声放大器的设计

Namrata Yadav, Abhishek Pandey, V. Nath
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引用次数: 9

摘要

提出了一种适用于全球定位系统(GPS)的高增益、低噪声LNA。利用UMC 90nm库,设计并仿真了CMOS低噪声放大器的实现。拓扑结构为单端LNAs设计,采用级联晶体管进行隔离;共源晶体管由共栅极晶体管驱动。为了获得良好的电压增益和最小的噪声系数,采用源退化技术进行级联编码输入匹配。晶体管工作在亚阈值区域。在1.57 GHz频率下,用s参数检测功率增益、输入匹配、输出匹配、隔离、稳定性等参数。LNA的电压增益为31 dB。噪声系数为0.533 dB, 1dB压缩点为-16.95 dBm, IIP3为2.91 dBm。LNA在1.5 V电源下的功耗为8.7 mW。
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Design of CMOS low noise amplifier for 1.57GHz
This paper is enunciated a LNA with high gain and minimum noise performance for Global Positioning System (GPS) application. The CMOS Low Noise amplifier implementation is designed and simulated via cadence using UMC 90 nm library. The topology is single ended LNAs designed which uses cascaded transistor for isolation; the common source transistor is driven by common gate transistor. To have objective for good voltage gain with minimum noise figure, cascoding input matching is done using source degeneration technique. Transistors are operated in sub threshold region. At 1.57 GHz frequency, parameters like power gain, input matching, output matching, isolation, stability are examined by S-parameters. The voltage gain of LNA is 31 dB. The noise figure is 0.533 dB, 1dB compression point is -16.95 dBm and IIP3 is 2.91 dBm. The LNA is having power consumption as 8.7 mW for 1.5 V supply.
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