基于0.13μm SiGe BiCMOS技术的w波段直接转换I-Q混频器

Wei Liu, Haitao Liu, Ruitao Wang, Yihu Li, Xu Cheng, Y. Xiong
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引用次数: 3

摘要

提出了一种基于0.13 pm SiGe BiCMOS技术的w波段零中频基频下变频混频器。采用单平衡吉尔伯特单元作为混合器的核心。射频信号通过片上兰格耦合器馈送,实现I-Q通道。测量结果表明,当本路固定在85 GHz,功率杠杆为-3 dBm时,从83.5 GHz到86 GHz的转换增益大于7.5 dB;如果中频固定在300 MHz,则转换增益在83 GHz至86 GHz范围内高于9.5 dB,泵浦LO@-3 dBm, I-Q通道具有差分中频输出,以方便差分输入基带应用。在70 ~ 100ghz范围内射频回波损耗小于20db,在80ghz ~ 90ghz范围内LO口回波损耗小于10db。在70 GHz到110 GHz范围内,LO对RF的隔离度大于35 dB。混合器的直流功率为57 mW,芯片尺寸为0.8×0.8 mm2。
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A W-band direct-conversion I-Q mixer in 0.13μm SiGe BiCMOS technology
This paper presents a W-band zero intermediate frequency (Zero-IF) fundamental down conversion mixer in 0.13 pm SiGe BiCMOS technology. Single balanced Gilbert cell is utilized as a core of mixer. RF signal is fed through an on-chip Lange coupler to realize I-Q channels. Measured results show that the conversion gain is greater than 7.5 dB from 83.5 GHz to 86 GHz when LO is fixed at 85 GHz with power lever of -3 dBm; and if IF is fixed at 300 MHz, the conversion gain is above 9.5 dB from 83 GHz to 86 GHz with LO@-3 dBm pumped, the I-Q channels are with differential IF outputs to facilitate differential-input baseband applications. The RF return loss is better than 20 dB over 70-to-100 GHz, and LO port return loss is better than 10 dB from 80 GHz to 90 GHz. The LO to RF isolation is more than 35 dB from 70 GHz to 110 GHz. The mixer consumes 57 mW DC power with 0.8×0.8 mm2 chip size.
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