影响STT-MRAM切换效率和提高400°c兼容p-MTJs器件性能的关键参数

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268515

Guohan Hu, Matthias Georg Gottwald, Qing He, Joon-Min Park, G. Lauer, Janusz J. Nowak, S. Brown, B. Doris, D. Edelstein, E. Evarts, Pouya Hashemi, B. Khan, Young-Hwan Kim, C. Kothandaraman, P. MarchackNathan, E. O'Sullivan, M. Reuter, R. Robertazzi, Jonathan Z. Sun, T. Suwannasiri, P. Trouilloud, Y. Zhu, D. Worledge

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引用次数: 15

摘要

我们报告了四个关键参数对垂直磁各向异性STT-MRAM器件开关效率的影响:器件尺寸，器件电阻面积积(RA)，毯膜吉尔伯特阻尼常数(a)和工艺温度。通过优化垂直磁隧道结(p-MTJ)材料，消除了在400°c加工器件中观察到的性能下降。此外，首次开发了兼容400°c的双mtj，与具有相同自由层的单mtj相比，其开关效率提高了1.5倍。

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Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Performance degradation observed in 400°C-processed devices was eliminated by optimizing the perpendicular magnetic tunnel junction (p-MTJ) materials. Furthermore, 400°C-compatible double MTJs were developed for the first time and showed 1.5x improvement in switching efficiency compared to single MTJs with identical free layers.

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2017 IEEE International Electron Devices Meeting (IEDM)

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