铌酸锂薄膜光滑垂直刻蚀轮廓的高q Lamb波谐振器的实现

A. Aryal, Ravi Kiran Chityala, I. Stricklin, Sidhant Tiwari, A. Siddiqui, T. Busani
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引用次数: 1

摘要

在这项工作中,基于2 μm薄y型切割LiNbO3薄膜的Lamb波谐振器(LWRs)已经使用集成制造工艺制造,该工艺在表面上定义了IDTs(数字间换能器),并在底部表面定义了用于牺牲层的部分Si腔。讨论了蚀刻质量及其对器件性能的影响。我们首次在这种材料系统上提出了一种优化的高质量蚀刻MEMS(微机电系统)谐振器,具有光滑和垂直的侧壁,在846 MHz频率下的最大q因子为2500。我们观察到,当蚀刻表面具有显著的粗糙度和非垂直性时,谐振器系统在相同频率范围内的q因子为480。由于存在表面粗糙度和蚀刻边缘的非垂直性,器件的Q值大大降低。这确实突出了为这样的压电材料系统提供高质量的蚀刻轮廓是多么重要,这样设计的谐振器才能发挥其最佳性能。
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Realization of high-Q Lamb wave resonator with smooth vertical etching profile for thin film lithium niobate
In this work, Lamb Wave Resonators (LWRs) based on 2 μm thin Y-cut LiNbO3 films have been fabricated using integrated fabrication process that defines IDTs (Inter Digital Transducers) on top surface and a partial Si cavity for a sacrificial layer on the bottom surface. We discuss the etch quality and its effects on the device's performance. For the first time, we present an optimized high-quality etched MEMS (Micro-electromechanical Systems) Resonator with smooth and vertical sidewalls on this material system, reporting the maximum Q-factor of 2500 at 846 MHz frequency. We observed that the resonator system has a Q-factor of 480 over the same frequency range when the etched surface has significant roughness and non-verticality. Q values of the device are greatly diminished by the presence of surface roughness and non-verticality of the etched edges. This truly highlights how important it is to have a high-quality etch profile for a piezoelectric material system like this so that the designed resonators can perform at their best.
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