Y. Watanabe, S. Migita, N. Mise, T. Nabatame, H. Satake, A. Toriumi
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引用次数: 5
摘要
具有NiSi2/Si(111)面FUSI S/D的金属/高k SOI mosfet有望用于缩小至低于10 nm栅极长度的大规模器件。我们所开发的面结技术随着栅极长度的减小而更有效地工作。该器件概念可以应用于finfet等3D结构，并且还可以减轻SOI厚度的缩放
Sub-10 nm gate length metal/high-k SOI MOSFETs with NiSi/sub 2/ [111]-facetted full silicide source/drain
Metal/high-k SOI MOSFETs with NiSi2/Si (111)-facetted FUSI S/D are promising for aggressively scaled devices down to sub-10 nm gate length. The facet junction technique that we have developed works more effectively as the gate length becomes smaller. This device concept can be applied to 3D structures such as FinFETs, and it can also relieve the scaling of SOI thickness
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