在MOVPE生长的二元III-V材料上形成天然氧化物-对表面润湿性的影响

A. Gocalinska, J. Bogdan, G. Hughes, E. Pelucchi
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引用次数: 0

摘要

通过接触角测量和x射线光电子能谱(XPS)记录了环境储存金属有机气相外延(MOVPE)生长GaAs, InP和InAs的天然氧化物形成。在外延表面上形成的不同类型的氧化物的相对数量的变化,呈现出从疏水到亲水状态的时间依赖性转变。我们提出了润湿性与III族氧化物数量的定性一致,而与总体氧化物组成缺乏这种相关性,这在某种程度上表明V族氧化物的作用(令人惊讶的)很小。
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Native oxides formation on MOVPE grown binary III-V materials — Impact on surface wettability
The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.
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