130纳米InP技术的g波段功率放大器

M. Bao, V. Vassilev, D. Gustafsson, H. Zirath
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引用次数: 4

摘要

两个g波段三级功率放大器(PA),一个达灵顿放大器和一个堆叠放大器,采用130纳米InP HBT技术设计和制造。堆叠放大器显示70 GHz带宽为S21(从140 GHz到210 GHz),峰值S21增益为30 dB。它的分数带宽(FBW)为40%。虽然达林顿放大器的90 GHz带宽为S21(从130 GHz到220 GHz),峰值S21增益为20 dB,但达林顿放大器的FBW为51%,在g频段放大器中最高。此外,Darlington PA在150 GHz时的饱和输出功率Psat为9.6 dBm,功率附加效率(PAE)为14.7%,功耗为55 mW。堆叠放大器在150 GHz时的Psat为13.4 dBm, PAE为17.3%,直流功耗为108 mW。据作者所知,在已发表的D/ g波段PA中,堆叠PA的PAE最高。
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G-band Power Amplifiers in 130 nm InP Technology
Two G-band three-stage power amplifiers (PA), a Darlington PA and a stacked PA, are designed and manufactured in 130 nm InP HBT Technology. The stacked PA shows a 70 GHz bandwidth of S21 (from 140 GHz to 210 GHz) with a peak S21 gain of 30 dB. It has a fractional bandwidth (FBW) of 40%. While the Darlington PA demonstrates a 90 GHz bandwidth of S21 (from 130 GHz to 220 GHz) with a peak S21 gain of 20 dB, the FBW of the Darlington PA is 51% which is highest among the G-band PAs. Furthermore, the Darlington PA has a saturated output power, Psat, of 9.6 dBm at 150 GHz, and a power added efficiency (PAE) of 14.7% with a 55 mW de power consumption. The stacked PA has a Psat of 13.4 dBm at 150 GHz, and a PAE of 17.3% with a 108 mW dc power consumption. To authors' knowledge, the stacked PA has the highest PAE among the D/G-band PAs published in the literature.
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