硅异质结太阳能电池的制备及其二次离子质谱表征

M. Siddiqui, V. Bhardwaj, A. Saxena, S. Singh
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引用次数: 0

摘要

具有本质层的异质结(HIT™是松下有限公司的商标)太阳能电池技术是一项最新技术,并已成功地演示了松下有限公司的太阳能发电。在异质结太阳能电池中,非晶硅和晶体硅之间形成结。异质结太阳能电池的主要优点是由于能带弯曲而提供较高的挥发性有机化合物。据报道,由Kaneka株式会社(M/s Kaneka Corporation)研制的异质结背接触晶体硅太阳能电池的最高效率为26.6%。本文讨论了HIT电池的制备工艺及其二次离子质谱(SIMS)表征。IV曲线显示出非常高的串联电阻,这可以用SIMS数据来解释。
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Processing of Silicon Heterojunction Solar Cell and Its Secondary Ion Mass Spectrometric Characterization
Hetero junction with intrinsic layer (HIT™ is a trademark of Panasonic Ltd.) solar cell technology is a recent technology and has been successfully demonstrated for solar power generation by M/s Panasonic Ltd. In Heterojunction solar cell the junction is formed between amorphous silicon and crystalline silicon wafer. The major advantage of Heterojunction solar cell is that it offers higher Voc because of band bending. The reported highest efficiency of Heterojunction solar cell is 26.6 % by M/s Kaneka Corporation (heterojunction back-contact crystalline silicon solar cell). This paper discuss the processing of HIT cell and their Secondary Ion Mass Spectrometric (SIMS) characterization. The IV curve shows very high series resistance which are explained with the help of SIMS data.
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