8-15 GHz, 1W HBT功率MMIC, 16 dB增益和48%峰值功率增加效率

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394433

F. Ali, M. Salib, A. Gupta, D. Dawson

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引用次数: 12

摘要

利用共发射极GaAs异质结双极晶体管(hbt)，设计并制作了一种两级X-Ku波段MMIC功率放大器。该单片放大器在8-15 GHz范围内实现了16 dB增益，1.4 W (CW)峰值输出功率和48%的峰值功率附加效率(PAE)。输入输出匹配网络，以及偏置电路，都包含在这个HBT MMIC中。据作者所知，这是在X-Ku波段的任何宽带单片功率放大器中报道的最高效率和最高增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 8-15 GHz, 1W HBT power MMIC with 16 dB gain and 48% peak power added efficiency

A two-stage X-Ku band MMIC power amplifier has been designed and fabricated using common-emitter GaAs heterojunction bipolar transistors (HBTs). This monolithic amplifier has achieved 16 dB gain, 1.4 W (CW) peak output power and 48% peak power added efficiency (PAE) over 8-15 GHz. Input and output matching networks, as well as biasing circuits, are all contained within this HBT MMIC. To the authors' knowledge, this is the highest efficiency and the highest gain reported for any broadband monolithic power amplifier in the X-Ku band.<>

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15th Annual GaAs IC Symposium

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