Characterization of HfO2/TiOx ReRAM Cells in Pulse Operation Mode

Redox-based resistive random access memories (ReRAM) are promising candidates for the use in ‘beyond-von Neumann’ architectures. One key issue for utilizing ReRAM for e.g. neuromorphic applications is a gradual SET and RESET behavior, allowing to write various resistance states emulating synaptic weights. However, a typical SET event for filamentary-like valence change mechanism devices is happening abrupt due to its physical principle. In this work we demonstrate a gradual SET behavior for $\text{HfO}_{2}/\text{TiO}_{\mathrm{x}}$ ReRAM cells in pulse mode. The results are discussed in view of the inherent properties of the particular bilayer structure.