硅纳米线器件中的电子-声子相互作用:低场迁移率和自一致的EM NEGF模拟

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931627

G. Mil'nikov, N. Mori

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摘要

本文提出了一种考虑非弹性散射过程的纳米线mosfet量子输运模拟方法。将具有实际电子-声子相互作用的原子紧密结合哈密顿量转化为等效的低维输运模型，可以很容易地用于全尺度NEGF模拟。通过计算n-Si NW器件的IV特性，证明了该方法的实用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electron-phonon interaction in Si nanowire devices: Low field mobility and self-consistent EM NEGF simulations

The paper presents a method for quantum transport simulations in nanowire (NW) MOSFETs with inelastic scattering processes incorporated. An atomistic tight-binding Hamiltonian with realistic electron-phonon interaction is transformed into an equivalent low-dimensional transport model which can be easily used in full-scaled NEGF simulations. The utility of the method is demonstrated by computing IV characteristics in n-Si NW devices.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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