K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto
{"title":"热处理对二维射频磁控溅射Bi/sub 4/Ti/sub 3/O/sub 12/薄膜电性能的影响","authors":"K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto","doi":"10.1109/ISAF.2002.1195896","DOIUrl":null,"url":null,"abstract":"Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of heat treatment on electric properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by two-dimensional RF magnetron sputtering\",\"authors\":\"K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto\",\"doi\":\"10.1109/ISAF.2002.1195896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of heat treatment on electric properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by two-dimensional RF magnetron sputtering
Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.