高电子迁移率晶体管对太赫兹辐射等离子体振荡响应的模拟

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865859

A. Mahi, A. Belghachi, H. Marinchio, C. Palermo, L. Varani

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引用次数: 1

摘要

通过数值流体动力学(HD)模型和泊松伪二维方程，我们模拟了高电子迁移率晶体管(HEMT)对施加在其栅极和/或漏极触点上的太赫兹信号的漏极电流响应，以获得检测方面的最佳配置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors

By means of a numerical hydrodynamic (HD) model coupled with Poisson pseudo-2D equation, we simulate the drain current response of a high electron mobility transistor (HEMT) to a THz signal applied to its gate and/or to its drain contacts in order to obtain the optimal configuration in terms of detection.

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2014 International Workshop on Computational Electronics (IWCE)

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