C-V法测量MEMS致动器偏转

S. Verma, Bhaskar Mitra
{"title":"C-V法测量MEMS致动器偏转","authors":"S. Verma, Bhaskar Mitra","doi":"10.1109/ICEE56203.2022.10118163","DOIUrl":null,"url":null,"abstract":"This study explores the correlation between indirect and direct deflection measurement techniques for MEMS actuators. The measured airgap capacitance is used to calculate deflection using parallel plate model and FEM extracted model for indirect technique. Direct device deflection is measured using an optical profilometer. A 110 µm long and 2.5 µm thick Si-folded cantilever beam with 460 nm airgap electrostatic actuation is used for the measurement. The characterization shows that the device pre-pull-in deflection is up to 98 nm for 4V range with both the methods. The calculated data demonstrate that, in contrast to the parallel plate, which has a 12.7% mean square error, the FEM calibrated model agrees with profilometer to within 8.6% for pre-pull-in deflection.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Measurement of MEMS Actuator Deflection by C-V Method\",\"authors\":\"S. Verma, Bhaskar Mitra\",\"doi\":\"10.1109/ICEE56203.2022.10118163\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study explores the correlation between indirect and direct deflection measurement techniques for MEMS actuators. The measured airgap capacitance is used to calculate deflection using parallel plate model and FEM extracted model for indirect technique. Direct device deflection is measured using an optical profilometer. A 110 µm long and 2.5 µm thick Si-folded cantilever beam with 460 nm airgap electrostatic actuation is used for the measurement. The characterization shows that the device pre-pull-in deflection is up to 98 nm for 4V range with both the methods. The calculated data demonstrate that, in contrast to the parallel plate, which has a 12.7% mean square error, the FEM calibrated model agrees with profilometer to within 8.6% for pre-pull-in deflection.\",\"PeriodicalId\":281727,\"journal\":{\"name\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEE56203.2022.10118163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10118163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本研究探讨了MEMS致动器的间接和直接偏转测量技术之间的关系。采用平行板模型和间接法有限元提取模型,利用实测气隙电容计算挠度。直接器件偏转是用光学轮廓仪测量的。测量采用长110 μ m、厚2.5 μ m的硅折叠悬臂梁,气隙为460 nm,静电驱动。表征表明,在4V范围内,两种方法的器件预拉入偏转均高达98 nm。计算数据表明,与平行板的均方误差12.7%相比,有限元校正模型与轮廓仪的预拉入挠度在8.6%以内。
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Measurement of MEMS Actuator Deflection by C-V Method
This study explores the correlation between indirect and direct deflection measurement techniques for MEMS actuators. The measured airgap capacitance is used to calculate deflection using parallel plate model and FEM extracted model for indirect technique. Direct device deflection is measured using an optical profilometer. A 110 µm long and 2.5 µm thick Si-folded cantilever beam with 460 nm airgap electrostatic actuation is used for the measurement. The characterization shows that the device pre-pull-in deflection is up to 98 nm for 4V range with both the methods. The calculated data demonstrate that, in contrast to the parallel plate, which has a 12.7% mean square error, the FEM calibrated model agrees with profilometer to within 8.6% for pre-pull-in deflection.
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