M. Berg, Karl‐Magnus Persson, E. Lind, H. Sjoland, L. Wernersson
{"title":"利用砷化铟纳米线mosfet的单平衡下转换混频器","authors":"M. Berg, Karl‐Magnus Persson, E. Lind, H. Sjoland, L. Wernersson","doi":"10.1109/ICIPRM.2014.6880569","DOIUrl":null,"url":null,"abstract":"We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs\",\"authors\":\"M. Berg, Karl‐Magnus Persson, E. Lind, H. Sjoland, L. Wernersson\",\"doi\":\"10.1109/ICIPRM.2014.6880569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs
We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
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