硅中间层上多芯片模块的电气设计与性能

F. Baez, M. Cranmer, M. Shapiro, J. Audet, D. Berger, E. Sprogis, C. Collins, S. Iyer
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引用次数: 9

摘要

采用IBM的硅技术设计了一个多芯片模块包。该模块由两个相同尺寸和类型的芯片组成,通过一个硅中间层与一个大型ASIC芯片水平通信。片与片之间的链路运行速度为8gbps,损耗为0.5 dB/mm,反射<;20分贝。所有链路歪斜匹配在2 ps以内。模型与硬件进行了相关,迹线损耗在建模数据的0.1 dB以内。该模块的输入由高速射频信号组成,该模块针对板到封装的转换进行了优化。模块输出为15Gbps高速链路。输入和输出信号上行或下行通过硅介面(TSV)作为其电路径的一部分。TSV参数不限制模块的电气性能。
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Electrical design and performance of a multichip module on a silicon interposer
A multichip module package has been designed in IBM's silicon technology. The module consists of two chips of same size and type communicating horizontally through a silicon interposer to a large ASIC chip. The chip to chip links operate at 8 Gbps with a loss of 0.5 dB/mm and reflections <; 20 dB. All links are skew matched to within 2 ps. Model to hardware correlation was performed and trace loss is within 0.1 dB of modeling data. The input to the module consists of a high speed RF signal and the module was optimized for board to package transition. Outputs of the module are 15Gbps high speed links. Both input and output signals go up or down a through silicon via (TSV) in the silicon interposer as part of their electrical paths. TSV parameters do not limit the electrical performance of the module.
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