在硅上无氧化物键合的InP膜的异质界面上的电传输

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880572

K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau

{"title":"在硅上无氧化物键合的InP膜的异质界面上的电传输","authors":"K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau","doi":"10.1109/ICIPRM.2014.6880572","DOIUrl":null,"url":null,"abstract":"A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si\",\"authors\":\"K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau\",\"doi\":\"10.1109/ICIPRM.2014.6880572\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880572\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用直接无氧化键合的方法制备了n-InP/n-Si异质结，并对其电输运进行了研究。首先对波段对准进行了数值计算，并讨论了理论I(V)曲线。然后制作了二极管，并将实验I(V)曲线与理论进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si

A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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