C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, Hsuan-Chi Tseng, C. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, Fu-Sheng Chang, Wei-Chang Ray, Y. Tseng, Shu-Tong Chang, T. C. Chen, M. Lee
{"title":"高密度eNVM中采用叠置HfZrO2均匀化角场的三维GAA纳米片铁电场效应管耐久性> 1011循环","authors":"C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, Hsuan-Chi Tseng, C. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, Fu-Sheng Chang, Wei-Chang Ray, Y. Tseng, Shu-Tong Chang, T. C. Chen, M. Lee","doi":"10.1109/vlsitechnologyandcir46769.2022.9830345","DOIUrl":null,"url":null,"abstract":"After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM\",\"authors\":\"C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, Hsuan-Chi Tseng, C. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, Fu-Sheng Chang, Wei-Chang Ray, Y. Tseng, Shu-Tong Chang, T. C. Chen, M. Lee\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM
After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.