K. Krishnamurthy, M. Poulton, J. Martin, R. Vetury, J.D. Brown, B. Shealy
{"title":"250W s波段GaN HEMT放大器","authors":"K. Krishnamurthy, M. Poulton, J. Martin, R. Vetury, J.D. Brown, B. Shealy","doi":"10.1109/CSICS07.2007.14","DOIUrl":null,"url":null,"abstract":"We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A 250W S-Band GaN HEMT Amplifier\",\"authors\":\"K. Krishnamurthy, M. Poulton, J. Martin, R. Vetury, J.D. Brown, B. Shealy\",\"doi\":\"10.1109/CSICS07.2007.14\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.\",\"PeriodicalId\":370697,\"journal\":{\"name\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS07.2007.14\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.14","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
摘要
我们报道了一种高效的250 W GaN HEMT功率放大器，带宽为2.1 -2.5 GHz。放大器采用AlGaN/GaN hemt与先进的源连接场板，适用于48v工作。该封装结合了两个22.2 mm外围器件，在10%占空比和20mus脉冲宽度的脉冲条件下，在2.14 GHz和2.5 GHz分别获得54.0 dBm和54.6 dBm的输出功率。据我们所知，这是在此功率水平和频率下报道的最宽带宽之一。这些放大器的目标是宽带数字蜂窝基础设施;卫星通信、航空电子和ISM波段应用。
We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.
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