在最先进的p沟道MOS晶体管的制造过程中,由于稍小的间隔而增加通断电流的机制

W. Lau, C. Eng, K.M. Tee, S. Siah, D. Vigar, Y.T. Kim, M. Lal, M. Bhat, L. Chan
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引用次数: 0

摘要

我们的观察是,当间隔变小时,最先进的pchannel MOS晶体管的通流和关流都趋向于变大。在本文中,我们提出了两种机制,涉及到这种导通电流和断流增加,由于一个稍小的间隔。机制A是有效通道长度的减小。由于TED/BED(瞬态增强扩散/硼增强扩散)机制,靠近通道区域的深度p型D/S植入物使p型D/S扩展植入物向通道区域扩散更远,导致有效通道长度Leff更小。机制B是串联电阻的减小。深型D/S植入物更靠近通道区域也会导致D/S串联电阻Rseries的降低*较小的Leffand Rseries一起可以产生更高的导通电流。较小的Leff也会导致断开电流的显著增加。
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A mechanism of increase in the on-current and offcurrent due to a slightly smaller spacer in state-of- the-art p-channel MOS transistors during manufacturing
Our observation is that both the oncurrent and off-current of state-of- the-art pchannel MOS transistors tend to become larger when the spacer becomes smaller. In this paper, we propose 2 mechanisms involved in this on-current and offcurrent increase due to a slightly smaller spacer. Mechanism A is a decrease in the effective channel length. Because of a TED/BED (transient enhanced diffusion/boron enhanced diffusion) mechanism, the deep p-type D/S implant closer to the channel region makes the p-type D/S extension implant to diffuse farther into the channel region, resulting in a smaller effective channel length Leff. Mechanism B is a decrease in the series resistance. The deep ptype D/S implant moving closer into the channel region also causes a reduction in the D/S series resistance Rseries*The smaller Leffand Rseriestogether can produce a higher on-current. The smaller Leff also causes a significant increase in off-current.
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