高性能低差稳压器的多回路设计技术

Quoc-Hoang Duong, J. Kong, H. Shin, Huy-Hieu Nguyen, Pan-Jong Kim, Yu-Seok Ko, Hwayeal Yu, Hojin Park
{"title":"高性能低差稳压器的多回路设计技术","authors":"Quoc-Hoang Duong, J. Kong, H. Shin, Huy-Hieu Nguyen, Pan-Jong Kim, Yu-Seok Ko, Hwayeal Yu, Hojin Park","doi":"10.1109/ASSCC.2016.7844174","DOIUrl":null,"url":null,"abstract":"In portable mobile devices, the power management IC unit (PMIC) requires many low-dropout voltage regulators (LDO) with different output voltages and load current capacities to support many applications; such as Application Processor (AP), Camera, Memory, RFIC Transceivers, USB, etc. For example, the PMIC in mobile phone Galaxy S6/S7 needs more than 50 LDOs to support the above applications, which require an extremely big quiescent current that degrade battery life time. Reducing quiescent current of LDO while maintaining system's operation is critical; however, there is a big trade-off between quiescent current and other LDO's characteristics such as undershoot/overshoot, PSRR, noise, etc. This paper proposed a new multiple-loop design technique for LDO that offer very low quiescent current (more than 50% reduction); however, excellent performance improvement compared to prior reported works. The design has been successfully implemented in many products of Samsung for mobile phone, Table PCs, etc.","PeriodicalId":278002,"journal":{"name":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\"Multiple-loop design technique for high-performance low dropout regulator\",\"authors\":\"Quoc-Hoang Duong, J. Kong, H. Shin, Huy-Hieu Nguyen, Pan-Jong Kim, Yu-Seok Ko, Hwayeal Yu, Hojin Park\",\"doi\":\"10.1109/ASSCC.2016.7844174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In portable mobile devices, the power management IC unit (PMIC) requires many low-dropout voltage regulators (LDO) with different output voltages and load current capacities to support many applications; such as Application Processor (AP), Camera, Memory, RFIC Transceivers, USB, etc. For example, the PMIC in mobile phone Galaxy S6/S7 needs more than 50 LDOs to support the above applications, which require an extremely big quiescent current that degrade battery life time. Reducing quiescent current of LDO while maintaining system's operation is critical; however, there is a big trade-off between quiescent current and other LDO's characteristics such as undershoot/overshoot, PSRR, noise, etc. This paper proposed a new multiple-loop design technique for LDO that offer very low quiescent current (more than 50% reduction); however, excellent performance improvement compared to prior reported works. The design has been successfully implemented in many products of Samsung for mobile phone, Table PCs, etc.\",\"PeriodicalId\":278002,\"journal\":{\"name\":\"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2016.7844174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2016.7844174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43

摘要

在便携式移动设备中,电源管理IC单元(PMIC)需要许多具有不同输出电压和负载电流容量的低降稳压器(LDO)来支持许多应用;如应用处理器(AP)、相机、存储器、RFIC收发器、USB等。例如,手机Galaxy S6/S7中的PMIC需要超过50个ldo来支持上述应用,这需要非常大的静态电流,从而降低电池寿命。在保持系统运行的同时减小LDO的静态电流至关重要;然而,在静态电流和LDO的其他特性(如过调差/过调差、PSRR、噪声等)之间存在很大的权衡。本文提出了一种新的LDO多回路设计技术,提供非常低的静态电流(降低50%以上);然而,与之前报道的作品相比,性能有了很大的提高。该设计已成功应用于三星手机、台式电脑等多款产品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Multiple-loop design technique for high-performance low dropout regulator
In portable mobile devices, the power management IC unit (PMIC) requires many low-dropout voltage regulators (LDO) with different output voltages and load current capacities to support many applications; such as Application Processor (AP), Camera, Memory, RFIC Transceivers, USB, etc. For example, the PMIC in mobile phone Galaxy S6/S7 needs more than 50 LDOs to support the above applications, which require an extremely big quiescent current that degrade battery life time. Reducing quiescent current of LDO while maintaining system's operation is critical; however, there is a big trade-off between quiescent current and other LDO's characteristics such as undershoot/overshoot, PSRR, noise, etc. This paper proposed a new multiple-loop design technique for LDO that offer very low quiescent current (more than 50% reduction); however, excellent performance improvement compared to prior reported works. The design has been successfully implemented in many products of Samsung for mobile phone, Table PCs, etc.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Copyright page Fractional-N DPLL based low power clocking architecture for 1–14 Gb/s multi-standard transmitter A 16–43 GHz low-noise amplifer with 2.5–4.0 dB noise figure A 12 bit 150 MS/s 1.5 mW SAR ADC with adaptive radix DAC in 40 nm CMOS A low-power calibration-free fractional-N digital PLL with high linear phase interpolator
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1