{"title":"用改进的拉伸指数方程估计不同偏置温度应力下a-IGZO TFTs的阈值电压位移","authors":"Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543647","DOIUrl":null,"url":null,"abstract":"In this work, we study threshold voltage (Vth) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the Vth shift, and a systematic extraction method is provided. The Vth shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Estimation of threshold voltage shift in a-IGZO TFTs under different bias temperature stress by improved stretched-exponential equation\",\"authors\":\"Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang\",\"doi\":\"10.1109/AM-FPD.2016.7543647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we study threshold voltage (Vth) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the Vth shift, and a systematic extraction method is provided. The Vth shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Estimation of threshold voltage shift in a-IGZO TFTs under different bias temperature stress by improved stretched-exponential equation
In this work, we study threshold voltage (Vth) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the Vth shift, and a systematic extraction method is provided. The Vth shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.
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