S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi
{"title":"采用Au/Ta/Ti金属键合层气相吸进简化真空封装工艺","authors":"S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598438","DOIUrl":null,"url":null,"abstract":"Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer\",\"authors\":\"S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi\",\"doi\":\"10.1109/LTB-3D53950.2021.9598438\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.\",\"PeriodicalId\":198318,\"journal\":{\"name\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D53950.2021.9598438\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer
Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.
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