M. Patrashin, N. Sekine, A. Kasamatsu, I. Watanabe, I. Hosako, Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara
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Zero-bias GaAsSb/InAlAs/InGaAs tunnel diode detectors for 220–330 GHz range
This presentation describes on-wafer characterization of GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection in 220-330GHz band. Voltage sensitivity above 1000V/W was measured in 0.8μm×0.8μm mesa device at room temperature. The detectors demonstrated enhanced temperature stability of the characteristics compared to zero-bias Schottky barrier diodes. The estimated variations of the zero-bias sensitivity at temperatures from 17K to 300K were less than 2dB.
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