基于嵌入式RRAM技术的28nm数据存储器应用于汽车微控制器

Alessandro Grossi, M. Coppetta, S. Aresu, A. Kux, T. Kern, R. Strenz
{"title":"基于嵌入式RRAM技术的28nm数据存储器应用于汽车微控制器","authors":"Alessandro Grossi, M. Coppetta, S. Aresu, A. Kux, T. Kern, R. Strenz","doi":"10.1109/IMW56887.2023.10145951","DOIUrl":null,"url":null,"abstract":"We present features adding extra reliability margin for emerging Non-Volatile Memories adoption in automotive microcontrollers, and discuss experimental data of embedded 28nm RRAM Data Memory on high statistics from a microcontroller demonstrator. The results reported show that 28nm embedded RRAM reached an adequate maturity and is ready for replacement of embedded Flash in automotive applications.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers\",\"authors\":\"Alessandro Grossi, M. Coppetta, S. Aresu, A. Kux, T. Kern, R. Strenz\",\"doi\":\"10.1109/IMW56887.2023.10145951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present features adding extra reliability margin for emerging Non-Volatile Memories adoption in automotive microcontrollers, and discuss experimental data of embedded 28nm RRAM Data Memory on high statistics from a microcontroller demonstrator. The results reported show that 28nm embedded RRAM reached an adequate maturity and is ready for replacement of embedded Flash in automotive applications.\",\"PeriodicalId\":153429,\"journal\":{\"name\":\"2023 IEEE International Memory Workshop (IMW)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW56887.2023.10145951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们介绍了在汽车微控制器中采用新兴非易失性存储器增加额外可靠性裕度的特性,并讨论了嵌入式28nm RRAM数据存储器在微控制器演示器的高统计数据上的实验数据。结果表明,28nm嵌入式RRAM已经足够成熟,可以在汽车应用中取代嵌入式闪存。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers
We present features adding extra reliability margin for emerging Non-Volatile Memories adoption in automotive microcontrollers, and discuss experimental data of embedded 28nm RRAM Data Memory on high statistics from a microcontroller demonstrator. The results reported show that 28nm embedded RRAM reached an adequate maturity and is ready for replacement of embedded Flash in automotive applications.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory 7-Bit/2Cell (X3.5), 9-Bit/2Cell (X4.5) NAND Flash Memory: Half Bit technology Memory Window in Si:HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes Recent Technology Insights on STT-MRAM: Structure, Materials, and Process Integration Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1