J. Marek, A. Šatka, D. Donoval, M. Molnar, J. Priesol, A. Chvála, P. Pribytny
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Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT
Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.
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