{"title":"垂直缩放的100nm T栅AlGaN/GaN hemt，频率为125GHz f/sub T/和174GHz f/sub MAX/","authors":"K. Boutros, W. Luo, K. Shinohara","doi":"10.1109/DRC.2005.1553112","DOIUrl":null,"url":null,"abstract":"In this work, we report on vertically scaled, 100nm gate-length Al <sub>0.31</sub>Ga<sub>0.69</sub>N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an f<sub>T</sub> of 125 GHz and an f <sub>max</sub> (U<sub>g</sub>) of 174 GHz. Careful device design and unique process features also resulted in a high peak G<sub>m,ext</sub> of 498 mS/mm, an I<sub>dss</sub> of 1.2A/mm, and a gate-to-drain breakdown of 30V","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/\",\"authors\":\"K. Boutros, W. Luo, K. Shinohara\",\"doi\":\"10.1109/DRC.2005.1553112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report on vertically scaled, 100nm gate-length Al <sub>0.31</sub>Ga<sub>0.69</sub>N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an f<sub>T</sub> of 125 GHz and an f <sub>max</sub> (U<sub>g</sub>) of 174 GHz. Careful device design and unique process features also resulted in a high peak G<sub>m,ext</sub> of 498 mS/mm, an I<sub>dss</sub> of 1.2A/mm, and a gate-to-drain breakdown of 30V\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/
In this work, we report on vertically scaled, 100nm gate-length Al 0.31Ga0.69N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an fT of 125 GHz and an f max (Ug) of 174 GHz. Careful device design and unique process features also resulted in a high peak Gm,ext of 498 mS/mm, an Idss of 1.2A/mm, and a gate-to-drain breakdown of 30V
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