Analysis of Different Passivation Solute Weight Ratio on Performance Influence of Indium Oxide Electronic Characteristics

Indium oxide (In2O3) material has decent electronic characteristics as the channel layer of the thin film transistor (TFT), but obviously it has the improvement possibility in terms of stability and threshold voltage. We use poly tetra fluoroethylene (PTFE) as a passivation layer to prepare it above the In2O3TFT through solution treatment which protects the device and improves its performance. We performed electronic characterization of In2O3with different solute weight ratio PTFT passivation layer, analyzed the types and contents of the constituent elements in the micro area of the material by energy dispersive spectrometry and observed the dynamic and static response of the inverter drive. Got a proper conversion effect. It is concluded that the appropriate solute weight ratio of the PTFE passivation layer is helpful to improve the various electronic characteristics of the In2O3TFT and the relative content of each element under the optimal state.