{"title":"基于BiJFET阵列芯片的传感器低温抗辐射模拟接口","authors":"A. Titov, I. Pakhomov, A. I. Serebryakov","doi":"10.1109/EWDTS.2018.8524615","DOIUrl":null,"url":null,"abstract":"This article presents the design results of the precision microcircuit of the instrumentation amplifier (IA) based on the fully differential difference op-amp (FDDA) and the double-channel low pass filter (LPF). It shows that the application of such IA leads to the high parameters of the sensor interface in the stability of output offset voltage (200uV < V<inf>oo</inf> < 200uV) and common-mode rejection in the extended temperature range −197°C ÷ +27°C and on exposure to the neutron flux F<inf>n</inf> up to 10<sup>18</sup> n/m<sup>2</sup> and absorbed radiation dose D up to 1 Mrad. The results of the IA simulation designed on the base of radiation-hardened BiJFet technology (OJSC “Integral”, Minsk) are given.","PeriodicalId":127240,"journal":{"name":"2018 IEEE East-West Design & Test Symposium (EWDTS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Low-Temperature Radiation-Hardened Analog Interfaces of Sensors on the Base of BiJFET Array Chips\",\"authors\":\"A. Titov, I. Pakhomov, A. I. Serebryakov\",\"doi\":\"10.1109/EWDTS.2018.8524615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents the design results of the precision microcircuit of the instrumentation amplifier (IA) based on the fully differential difference op-amp (FDDA) and the double-channel low pass filter (LPF). It shows that the application of such IA leads to the high parameters of the sensor interface in the stability of output offset voltage (200uV < V<inf>oo</inf> < 200uV) and common-mode rejection in the extended temperature range −197°C ÷ +27°C and on exposure to the neutron flux F<inf>n</inf> up to 10<sup>18</sup> n/m<sup>2</sup> and absorbed radiation dose D up to 1 Mrad. The results of the IA simulation designed on the base of radiation-hardened BiJFet technology (OJSC “Integral”, Minsk) are given.\",\"PeriodicalId\":127240,\"journal\":{\"name\":\"2018 IEEE East-West Design & Test Symposium (EWDTS)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE East-West Design & Test Symposium (EWDTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2018.8524615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2018.8524615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Low-Temperature Radiation-Hardened Analog Interfaces of Sensors on the Base of BiJFET Array Chips
This article presents the design results of the precision microcircuit of the instrumentation amplifier (IA) based on the fully differential difference op-amp (FDDA) and the double-channel low pass filter (LPF). It shows that the application of such IA leads to the high parameters of the sensor interface in the stability of output offset voltage (200uV < Voo < 200uV) and common-mode rejection in the extended temperature range −197°C ÷ +27°C and on exposure to the neutron flux Fn up to 1018 n/m2 and absorbed radiation dose D up to 1 Mrad. The results of the IA simulation designed on the base of radiation-hardened BiJFet technology (OJSC “Integral”, Minsk) are given.
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