SiGe p- finet中VAF的NBTI时间动力学和T依赖性建模

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268345

N. Parihar, R. Southwick, M. Wang, J. Stathis, S. Mahapatra

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引用次数: 16

摘要

对替代金属栅极(RMG)高k值金属栅极(HKMG) SiGe p- finfet中的NBTI进行了建模。量化了直流和交流应力和恢复的时间动力学，电压加速因子(VAF)对温度(T)的依赖性，以及Ge%和N%的影响。对Si - p- finet进行基准测试，并通过TCAD和带结构计算来解释工艺(Ge%， N%)依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs

NBTI in Replacement Metal Gate (RMG) High-K Metal Gate (HKMG) SiGe p-FinFETs is modeled. Time kinetics for DC and AC stress and recovery, temperature (T) dependence of voltage acceleration factor (VAF), and impact of Ge% and N% are quantified. Benchmarking is done with Si p-FinFETs, and process (Ge%, N%) dependence is explained by TCAD and band structure calculations.

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2017 IEEE International Electron Devices Meeting (IEDM)

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