Modeling and simulation of static power dissipation in CMOS with SELBOX structure

SELective Buried OXide MOSFET (SELBOX) structure reduces the self-heating and kink effect challenges linked with the Silicon on Insulator (SOI) MOSFET. The SELBOX structure also dissipates less static power than the BULK MOSFET while maintaining a high operating speed. In this paper, we present a model that describes the reduction in static power dissipation. SELBOX, SOI and BULK MODFET devices are designed and simulated with Silvaco TCAD tools. Simulation results are also presented and compared with the model results.