{"title":"SOI CMOS作为主流低功耗技术:关键评估","authors":"D. Antoniadis","doi":"10.1145/263272.263357","DOIUrl":null,"url":null,"abstract":"This paper provides an overview of SOI MOSFET theory and practice with emphasis on circuit applications issues. Fully and partially depleted channel devices are considered and particular attention is given to describing the so-called floating-body effects that are unique to SOI. Two advanced SOI MOSFET configurations, dual-gate SOI and active body SOI, specifically developed for low voltage circuit applications are also discussed.","PeriodicalId":334688,"journal":{"name":"Proceedings of 1997 International Symposium on Low Power Electronics and Design","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"SOI CMOS as a mainstream low-power technology: a critical assessment\",\"authors\":\"D. Antoniadis\",\"doi\":\"10.1145/263272.263357\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides an overview of SOI MOSFET theory and practice with emphasis on circuit applications issues. Fully and partially depleted channel devices are considered and particular attention is given to describing the so-called floating-body effects that are unique to SOI. Two advanced SOI MOSFET configurations, dual-gate SOI and active body SOI, specifically developed for low voltage circuit applications are also discussed.\",\"PeriodicalId\":334688,\"journal\":{\"name\":\"Proceedings of 1997 International Symposium on Low Power Electronics and Design\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1997 International Symposium on Low Power Electronics and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/263272.263357\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1997 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/263272.263357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SOI CMOS as a mainstream low-power technology: a critical assessment
This paper provides an overview of SOI MOSFET theory and practice with emphasis on circuit applications issues. Fully and partially depleted channel devices are considered and particular attention is given to describing the so-called floating-body effects that are unique to SOI. Two advanced SOI MOSFET configurations, dual-gate SOI and active body SOI, specifically developed for low voltage circuit applications are also discussed.