SOI CMOS作为主流低功耗技术:关键评估

D. Antoniadis
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引用次数: 9

摘要

本文概述了SOI MOSFET的理论和实践,重点介绍了电路应用问题。考虑了完全耗尽和部分耗尽的通道器件,并特别注意描述SOI特有的所谓浮体效应。两种先进的SOI MOSFET配置,双栅SOI和有源体SOI,专门为低压电路应用开发也进行了讨论。
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SOI CMOS as a mainstream low-power technology: a critical assessment
This paper provides an overview of SOI MOSFET theory and practice with emphasis on circuit applications issues. Fully and partially depleted channel devices are considered and particular attention is given to describing the so-called floating-body effects that are unique to SOI. Two advanced SOI MOSFET configurations, dual-gate SOI and active body SOI, specifically developed for low voltage circuit applications are also discussed.
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