{"title":"在200 GHz SiGe技术下，不同集电极设计点的低噪声性能接近BV/sub CEO/","authors":"D. Greenberg, S. Sweeney, G. Freeman, D. Ahlgren","doi":"10.1109/MWSYM.2003.1210895","DOIUrl":null,"url":null,"abstract":"We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points\",\"authors\":\"D. Greenberg, S. Sweeney, G. Freeman, D. Ahlgren\",\"doi\":\"10.1109/MWSYM.2003.1210895\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210895\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points
We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
