F. Abouzeid, S. Clerc, B. Pelloux-Prayer, P. Roche
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0.42-to-1.20V read assist circuit for SRAMs in CMOS 65nm
This work presents an ultra-low voltage SRAM read frequency boost circuit developed in 65nm to cover the lack of reliable sense amplifiers. This circuit enables full swing read speed-up and bitline leakage compensation from 1.2V to 0.42V. Embedded in a 65nm 32kb 10T SRAM, it offers 10% frequency gain and 10-to-90% leakage energy reduction from nominal to ultra-low voltage supply.
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