Sascha Breun, Albert-Marcel Schrotz, M. Dietz, V. Issakov, R. Weigel
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A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology
This paper presents a 314-344 GHz high output power push-push frequency doubler for radar applications with 1 dBm Psat at 324 GHz and 30 GHz Psat 3 dB–bandwidth. It is driven by a three-stage, cascode-based D-band driving stage, providing a differential saturated output power of 14.3 dBm at 154 GHz with a peak PAE of 4.5% and 13.4 dBm output referred P1 dB. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ft/fmax of 250 GHz / 370 GHz. Thanks to the use of harmonic reflectors an overall peak conversion gain of 20 dB is achieved and remains above 6 dB at saturation.
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