光寻址电位传感器中IGZO层的厚度效应

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543666

Chun-Hui Chen, Chia‐Ming Yang, Liann-Be Chang, Chao‐Sung Lai

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引用次数: 0

摘要

研究了in - ga - zn氧化物(IGZO)半导体层的厚度效应，用于光寻址电位传感器(LAPS)的pH传感。pH传感膜为45 nm厚的NbOx，直接安装在IGZO/ITO/玻璃基板上。反应式射频溅射中，IGZO层厚度由时模控制决定。在IGZO厚度为300 nm时，可获得最高的光电压和工作频率。当交流信号频率为1khz时，pH灵敏度约为65mv /pH。为了获得更好的滞回稳定性，建议进一步研究传感膜的优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thickness effect of IGZO layer in light-addressable potentiometric sensor

The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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