{"title":"利用相干相关干涉技术(CCI)研究了多孔硅表面沉积C-Ni薄膜的形貌","authors":"M. Suchańska, M. Makrenek, J. Świderski","doi":"10.1109/SMICND.2010.5649092","DOIUrl":null,"url":null,"abstract":"Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Using the Coherence Correlation Interferometry (CCI) technique for study topography of the C-Ni films deposited on porous silicon\",\"authors\":\"M. Suchańska, M. Makrenek, J. Świderski\",\"doi\":\"10.1109/SMICND.2010.5649092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.\",\"PeriodicalId\":377326,\"journal\":{\"name\":\"CAS 2010 Proceedings (International Semiconductor Conference)\",\"volume\":\"02 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2010 Proceedings (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2010.5649092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2010 Proceedings (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2010.5649092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Using the Coherence Correlation Interferometry (CCI) technique for study topography of the C-Ni films deposited on porous silicon
Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
