悬浮碳纳米管晶体管的增强电致发光

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553105

J. Chen, M. Freitag, J. Tsang, Q. Fu, Jie Liu, P. Avouris

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摘要

在这项工作中，我们报告了悬浮cntfet的第一个电致发光结果。我们不仅发现量子效率增加了2-3个数量级，而且发现光发射对CNTFET电学性质的依赖完全不同。为了制备悬浮型碳纳米管，我们在200 nm厚的SiO2硅片上蚀刻了2-10个微米宽的沟槽

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Enhanced electroluminescence in suspended carbon nanotube transistors

In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers

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63rd Device Research Conference Digest, 2005. DRC '05.

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