M. D. Hodge, R. Vetury, S. Gibb, M. Winters, P. Patel, M. Mclain, Ya Shen, D. Kim, Joe Jech, K. Fallon, R. Houlden, D. Aichele, J. Shealy
{"title":"使用未掺杂的单晶AlN-on-SiC谐振器的高抑制UNII 5.2GHz宽带体声波滤波器","authors":"M. D. Hodge, R. Vetury, S. Gibb, M. Winters, P. Patel, M. Mclain, Ya Shen, D. Kim, Joe Jech, K. Fallon, R. Houlden, D. Aichele, J. Shealy","doi":"10.1109/IEDM.2017.8268460","DOIUrl":null,"url":null,"abstract":"5.24GHz bulk acoustic wave filters, utilizing undoped single crystal aluminum nitride, are reported. The filters had an absolute 4dB bandwidth of 151 MHz, a minimum insertion loss of 2.82 dB and rejection >38 dB. Resonators show k<sup>2</sup><inf>eff</inf> of 6.32%, Q<inf>rnax</inf> of 1523, and FOM of 96.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators\",\"authors\":\"M. D. Hodge, R. Vetury, S. Gibb, M. Winters, P. Patel, M. Mclain, Ya Shen, D. Kim, Joe Jech, K. Fallon, R. Houlden, D. Aichele, J. Shealy\",\"doi\":\"10.1109/IEDM.2017.8268460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"5.24GHz bulk acoustic wave filters, utilizing undoped single crystal aluminum nitride, are reported. The filters had an absolute 4dB bandwidth of 151 MHz, a minimum insertion loss of 2.82 dB and rejection >38 dB. Resonators show k<sup>2</sup><inf>eff</inf> of 6.32%, Q<inf>rnax</inf> of 1523, and FOM of 96.\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators
5.24GHz bulk acoustic wave filters, utilizing undoped single crystal aluminum nitride, are reported. The filters had an absolute 4dB bandwidth of 151 MHz, a minimum insertion loss of 2.82 dB and rejection >38 dB. Resonators show k2eff of 6.32%, Qrnax of 1523, and FOM of 96.