{"title":"硫化氢退火制备石墨烯可控s掺杂","authors":"C. Liang, Yi Wang, Yuelin Wang, Tie Li","doi":"10.1109/DTIP.2014.7056646","DOIUrl":null,"url":null,"abstract":"In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Controllable S-doping of graphene through annealing with hydrogen sulfide\",\"authors\":\"C. Liang, Yi Wang, Yuelin Wang, Tie Li\",\"doi\":\"10.1109/DTIP.2014.7056646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.\",\"PeriodicalId\":268119,\"journal\":{\"name\":\"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIP.2014.7056646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIP.2014.7056646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Controllable S-doping of graphene through annealing with hydrogen sulfide
In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.
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