Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056669
S. Takamatsu, T. Yamashita, T. Itoh
We report on mete-scale large area pressure sensor which utilize sensor fabric consisting of conductive-polymer-coated fibers. In the previous study, the touch sensors with conductive-coated fibers are reported by our group, but the previous sensor can not detect pressure. To achieve mete-scale pressure array, the sensing electrode of conductive-polymer-coated fibers is improved. Firstly, the conductivity of the fiber is improved to several kΩ because poor conductivity leads to the large noise. Secondly, the area of the sensing electrode is enlarged through increase of the number of fibers because small area of the capacitive type of sensors leads to small amount of output signal. The fabricated sensor fabric was examined on the detection of pressure, resulting more than 1 pF capacitive change under 6 N/cm2. Therefore, our sensor will lead to meter-scale pressure sensor array and input devices for various electronic devices.
{"title":"Meter-scale pressure sensor array with woven conductive-polymer-coated fibers","authors":"S. Takamatsu, T. Yamashita, T. Itoh","doi":"10.1109/DTIP.2014.7056669","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056669","url":null,"abstract":"We report on mete-scale large area pressure sensor which utilize sensor fabric consisting of conductive-polymer-coated fibers. In the previous study, the touch sensors with conductive-coated fibers are reported by our group, but the previous sensor can not detect pressure. To achieve mete-scale pressure array, the sensing electrode of conductive-polymer-coated fibers is improved. Firstly, the conductivity of the fiber is improved to several kΩ because poor conductivity leads to the large noise. Secondly, the area of the sensing electrode is enlarged through increase of the number of fibers because small area of the capacitive type of sensors leads to small amount of output signal. The fabricated sensor fabric was examined on the detection of pressure, resulting more than 1 pF capacitive change under 6 N/cm2. Therefore, our sensor will lead to meter-scale pressure sensor array and input devices for various electronic devices.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116645895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056692
Marechal Baptiste, G. Jean, Levy Raphael, Le Traon Olivier, Mailly Frederick, Nouet Pascal
Onera has been developing quartz based MEMS inertial sensors for long, including for some years the associated digital electronics. Direct Digital Synthesis (DDS) and computerised control loops have been introduced as a replacement for self-sustained oscillators and analog PLL. However, the design parameters of digital synthesisers (word length of phase accumulator, size of Look Up Table, number of bits of DAC) affect the excitation signal spectrum driving the sensors. Spurious noise induced by those parameters can alter the sensors performances, especially in our cases of highly resonant vibrating structures (Q > 100000): spurs close to the resonant frequency tend to lower the quality factor. This paper exposes a review of this spurious noise and an approach for optimising the DDS design parameters. In addition, alternate DDS structures are also investigated and compared to the classical phase accumulator / look up table / D-A converter structure. In one case, the DAC is only one bit wide, and the sine shape is obtained through large oversampling and low-pass filtering (Σ/Δ technique). In space designs, the ability to skip the DAC and remain fully digital inside a FPGA is a trade-off to be considered. In an other case, the output is only a square but with low jitter, reshaped by a narrow band pass filter, to generate the expected sine output. Here, the trade-off is towards simpler electronics (no memory table) with a slightly more sophisticated analog filter.
{"title":"Direct digital synthesiser (DDS) design parameters optimisation for vibrating MEMS sensors: Optimisation of phase accumulator, Look-Up Table (LUT) and Digital to Analog Converter (DAC) sizes","authors":"Marechal Baptiste, G. Jean, Levy Raphael, Le Traon Olivier, Mailly Frederick, Nouet Pascal","doi":"10.1109/DTIP.2014.7056692","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056692","url":null,"abstract":"Onera has been developing quartz based MEMS inertial sensors for long, including for some years the associated digital electronics. Direct Digital Synthesis (DDS) and computerised control loops have been introduced as a replacement for self-sustained oscillators and analog PLL. However, the design parameters of digital synthesisers (word length of phase accumulator, size of Look Up Table, number of bits of DAC) affect the excitation signal spectrum driving the sensors. Spurious noise induced by those parameters can alter the sensors performances, especially in our cases of highly resonant vibrating structures (Q > 100000): spurs close to the resonant frequency tend to lower the quality factor. This paper exposes a review of this spurious noise and an approach for optimising the DDS design parameters. In addition, alternate DDS structures are also investigated and compared to the classical phase accumulator / look up table / D-A converter structure. In one case, the DAC is only one bit wide, and the sine shape is obtained through large oversampling and low-pass filtering (Σ/Δ technique). In space designs, the ability to skip the DAC and remain fully digital inside a FPGA is a trade-off to be considered. In an other case, the output is only a square but with low jitter, reshaped by a narrow band pass filter, to generate the expected sine output. Here, the trade-off is towards simpler electronics (no memory table) with a slightly more sophisticated analog filter.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"57 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114003531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056631
N. Lietaer, A. Summanwar, Sara Rund Herum, Leny Nazareno
Three-dimensional (3D) integration of MEMS and ICs enables improvements in device performance, and often requires through-silicon vias (TSVs). TSV technologies presently available for micro electromechanical systems (MEMS) either have completely filled vias or hollow vias. Hollow vias imply perforated wafers, and limit further processing options. We have investigated dry film resist which enables photolithography on perforated wafers. The investigated resist was found to have adequate adhesion to silicon, SiO2, and aluminum surfaces. Resist patterns with square openings of side length 15 μm and resist squares of side length 15 μm were reliably realized on all three investigated surfaces. On silicon surfaces, resist patterns with square openings of side length 10 μm and resist squares of side length 7 μm could be realized. The resist could withstand wet etching of 1 μm aluminum, reactive ion etching (RIE) of 7500 Å SiO2 and deep silicon etching (DRIE) of 30 μm Si. Individual process steps for the future fabrication of DRIE etched TSVs with SiO2 isolation, polysilicon conductor material and aluminum top contacts have been developed and verified.
MEMS和ic的三维(3D)集成可以提高器件性能，并且通常需要通硅过孔(tsv)。目前用于微机电系统(MEMS)的TSV技术要么是完全填充过孔，要么是空心过孔。空心通孔意味着穿孔晶圆，并限制了进一步的加工选择。我们研究了干膜抗蚀剂，使光刻在穿孔晶圆上。发现所研究的抗蚀剂对硅，SiO2和铝表面具有足够的附着力。在三个表面上均可靠地实现了边长为15 μm的方形开口和边长为15 μm的方形开口的抗蚀图案。在硅表面上，可以实现边长为10 μm的方形开口和边长为7 μm的方形开口的抗蚀图案。该抗蚀剂可承受1 μm铝的湿法腐蚀、7500 Å SiO2的反应离子腐蚀(RIE)和30 μm Si的深硅腐蚀(DRIE)。已经开发并验证了未来制造具有SiO2隔离，多晶硅导体材料和铝顶部触点的DRIE蚀刻tsv的各个工艺步骤。
{"title":"Dry-film resist technology for versatile TSV fabrication for MEMS, tested on blind dummy TSVs","authors":"N. Lietaer, A. Summanwar, Sara Rund Herum, Leny Nazareno","doi":"10.1109/DTIP.2014.7056631","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056631","url":null,"abstract":"Three-dimensional (3D) integration of MEMS and ICs enables improvements in device performance, and often requires through-silicon vias (TSVs). TSV technologies presently available for micro electromechanical systems (MEMS) either have completely filled vias or hollow vias. Hollow vias imply perforated wafers, and limit further processing options. We have investigated dry film resist which enables photolithography on perforated wafers. The investigated resist was found to have adequate adhesion to silicon, SiO2, and aluminum surfaces. Resist patterns with square openings of side length 15 μm and resist squares of side length 15 μm were reliably realized on all three investigated surfaces. On silicon surfaces, resist patterns with square openings of side length 10 μm and resist squares of side length 7 μm could be realized. The resist could withstand wet etching of 1 μm aluminum, reactive ion etching (RIE) of 7500 Å SiO2 and deep silicon etching (DRIE) of 30 μm Si. Individual process steps for the future fabrication of DRIE etched TSVs with SiO2 isolation, polysilicon conductor material and aluminum top contacts have been developed and verified.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126349029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056689
H. Nogami, H. Okada, S. Takamatsu, Takeshi Kobayashi, R. Maeda, T. Itoh
In previous work, we presented the development of a piezoelectric switch for applications in ultra-low power wireless sensor nodes for monitoring the health condition of chickens. Using Pb(Zr0.52, Ti0.48)O3 (PZT) thin films, we have developed "S"-shaped PZT cantilevers with proof masses. Since the resonant frequency of the PZT devices is around 24 Hz, we utilized superharmonic resonance to detect chicken movements as low as 5 to 15 Hz. However, the PZT devices broke when applied to other sensor nodes. "S"-shaped PZT devices are adequate for low vibrations, but are beset by structural problems that cause fragmentation on impact. In order to address these problems, in this paper, we examine methods for utilizing PolyVinylideneDiFluoride (PVDF) films as piezoelectric switches. These are stronger and generate high piezoelectric output voltages under large stress. We suggest a structure in which the large load is applied to the PVDF films. One end of PVDF film is fixed on the case of the sensor node, and the he PVDF films are bonded on a part of the belts which are wound around a chicken's wing. Since the PVDF films are subjected to direct force generated by the chicken's motion, high output voltages are expected. Using the high output voltages, we are able to measure the chicken's activity levels. As a result, we were able to confirm circadian change of activity, and successfully fabricated tough wireless sensor nodes for chickens by utilizing the features of the PVDF films.
{"title":"Piezoelectric PVDF film switch to activate event-driven system for chicken health monitoring","authors":"H. Nogami, H. Okada, S. Takamatsu, Takeshi Kobayashi, R. Maeda, T. Itoh","doi":"10.1109/DTIP.2014.7056689","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056689","url":null,"abstract":"In previous work, we presented the development of a piezoelectric switch for applications in ultra-low power wireless sensor nodes for monitoring the health condition of chickens. Using Pb(Zr0.52, Ti0.48)O3 (PZT) thin films, we have developed \"S\"-shaped PZT cantilevers with proof masses. Since the resonant frequency of the PZT devices is around 24 Hz, we utilized superharmonic resonance to detect chicken movements as low as 5 to 15 Hz. However, the PZT devices broke when applied to other sensor nodes. \"S\"-shaped PZT devices are adequate for low vibrations, but are beset by structural problems that cause fragmentation on impact. In order to address these problems, in this paper, we examine methods for utilizing PolyVinylideneDiFluoride (PVDF) films as piezoelectric switches. These are stronger and generate high piezoelectric output voltages under large stress. We suggest a structure in which the large load is applied to the PVDF films. One end of PVDF film is fixed on the case of the sensor node, and the he PVDF films are bonded on a part of the belts which are wound around a chicken's wing. Since the PVDF films are subjected to direct force generated by the chicken's motion, high output voltages are expected. Using the high output voltages, we are able to measure the chicken's activity levels. As a result, we were able to confirm circadian change of activity, and successfully fabricated tough wireless sensor nodes for chickens by utilizing the features of the PVDF films.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126560582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056656
Bing-Yu Wang, Chia-Che Wu
In this study, we develop a clamped-clamped beam-type piezoelectric vacuum pressure sensing element. The clamped-clamped piezoelectric beam is composed of a PZT layer and a copper substrate. A pair of electrodes is set near each end. An input voltage is applied to a pair of electrodes to vibrate the piezoelectric beam, and the output voltage is measured at the other pair. Because the viscous forces on the piezoelectric beam vary at different air pressures, the vibration of the beam depends on the vacuum pressure. The developed pressure sensor can sense a wide range of pressure, from 6.5 × 10-6 to 760 Torr. The experimental results showed that the output voltage is inversely proportional to the gas damping ratio, and thus, the vacuum pressure was estimated from the output voltage.
{"title":"Development of wide pressure range vacuum senser using piezoelectric beam structure","authors":"Bing-Yu Wang, Chia-Che Wu","doi":"10.1109/DTIP.2014.7056656","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056656","url":null,"abstract":"In this study, we develop a clamped-clamped beam-type piezoelectric vacuum pressure sensing element. The clamped-clamped piezoelectric beam is composed of a PZT layer and a copper substrate. A pair of electrodes is set near each end. An input voltage is applied to a pair of electrodes to vibrate the piezoelectric beam, and the output voltage is measured at the other pair. Because the viscous forces on the piezoelectric beam vary at different air pressures, the vibration of the beam depends on the vacuum pressure. The developed pressure sensor can sense a wide range of pressure, from 6.5 × 10-6 to 760 Torr. The experimental results showed that the output voltage is inversely proportional to the gas damping ratio, and thus, the vacuum pressure was estimated from the output voltage.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133801526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056665
A. Campos-Zatarain, D. Flynn, K. Aasmundtveit, N. Hoivik, K. Wang, H. Liu, T. Luu, M. Mirgkizoudi, R. Kay
This paper reports on the results obtained from performing "shake and bake" testing on demonstrator vehicles bonded using Cu-Sn SLID technique. The demonstrator vehicles were exposed concurrently to vibration and thermal loadings similar to those seen in aerospace and downhole applications. This work demonstrates that Cu-Sn SLID bonding process is ideal for packaging sensors and electronics to be used within harsh environments, especially those encountered in the aerospace and oil & gas industries.
{"title":"Characterization of Cu-Sn SLID interconnects for harsh environment applications","authors":"A. Campos-Zatarain, D. Flynn, K. Aasmundtveit, N. Hoivik, K. Wang, H. Liu, T. Luu, M. Mirgkizoudi, R. Kay","doi":"10.1109/DTIP.2014.7056665","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056665","url":null,"abstract":"This paper reports on the results obtained from performing \"shake and bake\" testing on demonstrator vehicles bonded using Cu-Sn SLID technique. The demonstrator vehicles were exposed concurrently to vibration and thermal loadings similar to those seen in aerospace and downhole applications. This work demonstrates that Cu-Sn SLID bonding process is ideal for packaging sensors and electronics to be used within harsh environments, especially those encountered in the aerospace and oil & gas industries.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"22 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124495744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056700
B. Arrazat, S. Orellana, C. Rivero, P. Fornara, A. Di-Giacomo, S. Blayac, P. Montmitonnet, K. Inal
A metallic in-situ stress sensor is modified to address electrical polarization and thus to locally heat this sensor by Joule effect. By coupling SEM electrical nano-probing with analytical modeling and multiphysics Finite Element Method (FEM), the thermo-mechanical properties are identified. As a result, a tensile stress state of 190 MPa, coefficient of thermal expansion of 22.5×10-6 K-1 and thermal conductivity of 190 W/(K·m) are identified in the aluminum thin film in agreement with literature. Moreover, high current induces irreversible deformation and breaking. Using multiphysics FE model with identified thermo-mechanical properties, the failure of the sensor under electrical solicitation is investigated. The evolution of local temperature and mechanical deformation on different sensor designs allows the determination of the breaking location and condition.
{"title":"Determination of material properties and failure using in-situ thermo-mechanical probe","authors":"B. Arrazat, S. Orellana, C. Rivero, P. Fornara, A. Di-Giacomo, S. Blayac, P. Montmitonnet, K. Inal","doi":"10.1109/DTIP.2014.7056700","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056700","url":null,"abstract":"A metallic in-situ stress sensor is modified to address electrical polarization and thus to locally heat this sensor by Joule effect. By coupling SEM electrical nano-probing with analytical modeling and multiphysics Finite Element Method (FEM), the thermo-mechanical properties are identified. As a result, a tensile stress state of 190 MPa, coefficient of thermal expansion of 22.5×10-6 K-1 and thermal conductivity of 190 W/(K·m) are identified in the aluminum thin film in agreement with literature. Moreover, high current induces irreversible deformation and breaking. Using multiphysics FE model with identified thermo-mechanical properties, the failure of the sensor under electrical solicitation is investigated. The evolution of local temperature and mechanical deformation on different sensor designs allows the determination of the breaking location and condition.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130824989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056646
C. Liang, Yi Wang, Yuelin Wang, Tie Li
In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.
{"title":"Controllable S-doping of graphene through annealing with hydrogen sulfide","authors":"C. Liang, Yi Wang, Yuelin Wang, Tie Li","doi":"10.1109/DTIP.2014.7056646","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056646","url":null,"abstract":"In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130442793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056645
M. Ya, N. Soin, A. Nordin
This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt-connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight beams provide the bias voltage. The switch is designed in 0.35μm complementary metal oxide semiconductor (CMOS) process and is electrostatically actuated by a low pull-in voltage of 2.9V. Taguchi Method is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant and a robust design. The pull-in voltage, vertical displacement, and maximum von Mises stress distribution was simulated using finite element modeling (FEM) simulation - IntelliSuite v8.7® software. With Pareto ANOVA technique, the percentage contribution of each geometric parameter to the spring constant and stress distribution was calculated; and then the optimized parameters were got as t=0.877μm, w=4μm, L1=40μm, L2=50μm and L3=70μm. RF performance of the switch was simulated by AWR Design Environment 10® and yielded isolation and insertion loss of -23dB and -9.2dB respectively at 55GHz.
{"title":"Design and optimization of a low-voltage shunt capacitive RF-MEMS switch","authors":"M. Ya, N. Soin, A. Nordin","doi":"10.1109/DTIP.2014.7056645","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056645","url":null,"abstract":"This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt-connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight beams provide the bias voltage. The switch is designed in 0.35μm complementary metal oxide semiconductor (CMOS) process and is electrostatically actuated by a low pull-in voltage of 2.9V. Taguchi Method is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant and a robust design. The pull-in voltage, vertical displacement, and maximum von Mises stress distribution was simulated using finite element modeling (FEM) simulation - IntelliSuite v8.7® software. With Pareto ANOVA technique, the percentage contribution of each geometric parameter to the spring constant and stress distribution was calculated; and then the optimized parameters were got as t=0.877μm, w=4μm, L1=40μm, L2=50μm and L3=70μm. RF performance of the switch was simulated by AWR Design Environment 10® and yielded isolation and insertion loss of -23dB and -9.2dB respectively at 55GHz.","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121172043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-01DOI: 10.1109/DTIP.2014.7056630
S. Chandra, R. Tiwari, C. Parthiban
A novel technique for fabrication of capacitive pressure sensor was conceived and implemented using press-on-contact in silicon-to-glass anodic bonding process. The novelty of the design lies in using a glass plate (Corning®7740) having through holes and metallization pattern for anodic bonding process. This enables the formation of press-on-contact between metal patterns on Si-sensor wafer and the glass plate. Silicon-to-glass bonding was carried out at wafer level and individual chips were separated by dicing technique. This methodology enables batch fabrication of the sensor chip wherein the bonding is done at wafer level for all the chips before separating the individual chips by dicing. For this purpose, press-on-contact in anodic bonding process was studied in detail to be used in fabrication of capacitive pressure sensor. The electrical continuity and the contact resistance of patterned metal were measured experimentally. The capacitive pressure sensor was fabricated using the proposed technique. The sensing element was a recessed silicon diaphragm of 5 μm thickness which was formed by anisotropie etching of silicon in 40 wt.% KOH solution using boron diffusion as etch stop layer for precise control of diaphragm thickness. After fabrication of capacitive pressure sensor, the change in capacitance was measured with applied pressure. The sensitivity was found to be ~ 1 pF/kg-cm-2 over the pressure range 0 to 0.6 kg/cm2. Thus, a capacitive pressure sensor using novel scheme was designed, simulated, fabricated and tested as "proof-of-concept".
{"title":"A novel technique for fabrication of MEMS based capacitive pressure sensor using press-on-contact in anodic bonding","authors":"S. Chandra, R. Tiwari, C. Parthiban","doi":"10.1109/DTIP.2014.7056630","DOIUrl":"https://doi.org/10.1109/DTIP.2014.7056630","url":null,"abstract":"A novel technique for fabrication of capacitive pressure sensor was conceived and implemented using press-on-contact in silicon-to-glass anodic bonding process. The novelty of the design lies in using a glass plate (Corning®7740) having through holes and metallization pattern for anodic bonding process. This enables the formation of press-on-contact between metal patterns on Si-sensor wafer and the glass plate. Silicon-to-glass bonding was carried out at wafer level and individual chips were separated by dicing technique. This methodology enables batch fabrication of the sensor chip wherein the bonding is done at wafer level for all the chips before separating the individual chips by dicing. For this purpose, press-on-contact in anodic bonding process was studied in detail to be used in fabrication of capacitive pressure sensor. The electrical continuity and the contact resistance of patterned metal were measured experimentally. The capacitive pressure sensor was fabricated using the proposed technique. The sensing element was a recessed silicon diaphragm of 5 μm thickness which was formed by anisotropie etching of silicon in 40 wt.% KOH solution using boron diffusion as etch stop layer for precise control of diaphragm thickness. After fabrication of capacitive pressure sensor, the change in capacitance was measured with applied pressure. The sensitivity was found to be ~ 1 pF/kg-cm-2 over the pressure range 0 to 0.6 kg/cm2. Thus, a capacitive pressure sensor using novel scheme was designed, simulated, fabricated and tested as \"proof-of-concept\".","PeriodicalId":268119,"journal":{"name":"2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122633896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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