{"title":"计算了npn Si/sub - 1-x/Ge/sub -x/ HBT的高频性能","authors":"M. Racanelli, D. Greve","doi":"10.1109/CORNEL.1989.79830","DOIUrl":null,"url":null,"abstract":"The authors calculate the performance of an Si/sub 1-x/Ge/sub x//Si HBT (heterojunction bipolar transistor), including effects of major importance such as bandgap narrowing and collector high injection. A description of the mobility model used is included. The results indicate that very high performance is achievable in these devices, particularly with respect to figures of merit such as f/sub max/, which are strongly influenced by the base resistance. For devices with 1- mu m geometry, the authors predict f/sub max/=81 GHz and f/sub T/=71 GHz. Such devices should also offer excellent performance in digital circuits in which low base resistance is essential.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Calculated high frequency performance of an npn Si/sub 1-x/Ge/sub x/ HBT\",\"authors\":\"M. Racanelli, D. Greve\",\"doi\":\"10.1109/CORNEL.1989.79830\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors calculate the performance of an Si/sub 1-x/Ge/sub x//Si HBT (heterojunction bipolar transistor), including effects of major importance such as bandgap narrowing and collector high injection. A description of the mobility model used is included. The results indicate that very high performance is achievable in these devices, particularly with respect to figures of merit such as f/sub max/, which are strongly influenced by the base resistance. For devices with 1- mu m geometry, the authors predict f/sub max/=81 GHz and f/sub T/=71 GHz. Such devices should also offer excellent performance in digital circuits in which low base resistance is essential.<<ETX>>\",\"PeriodicalId\":445524,\"journal\":{\"name\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1989.79830\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Calculated high frequency performance of an npn Si/sub 1-x/Ge/sub x/ HBT
The authors calculate the performance of an Si/sub 1-x/Ge/sub x//Si HBT (heterojunction bipolar transistor), including effects of major importance such as bandgap narrowing and collector high injection. A description of the mobility model used is included. The results indicate that very high performance is achievable in these devices, particularly with respect to figures of merit such as f/sub max/, which are strongly influenced by the base resistance. For devices with 1- mu m geometry, the authors predict f/sub max/=81 GHz and f/sub T/=71 GHz. Such devices should also offer excellent performance in digital circuits in which low base resistance is essential.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
