{"title":"300K和12.5K时HEMT器件x波段噪声参数","authors":"S. Weinreb, M. Pospieszalski","doi":"10.1109/MWSYM.1985.1132033","DOIUrl":null,"url":null,"abstract":"The four noise parameters of room-temperature and cryogenically-cooled HEMT's have been investigated. Two previously described structures, the quantum- well HEMT [1] and the high-transconductance HEMT [2] have been tested and compared with noise parameters of a MESFET (NE67383). It was demonstrated that the cryogenic noise performance of a HEMT is dependent on light illumination and may be or may not be better than that of a MESFET, depending on the device structure. The minimum noise temperature of T/sub min/ = 10.5 +- 1.5K of the quantum-well HEMT, illuminated with light, measured at f = 8.4 GHz and T/sub a/ = 12.5K is the best yet published for field effect transistors.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"X-Band Noise Parameters of HEMT Devices at 300K and 12.5K\",\"authors\":\"S. Weinreb, M. Pospieszalski\",\"doi\":\"10.1109/MWSYM.1985.1132033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The four noise parameters of room-temperature and cryogenically-cooled HEMT's have been investigated. Two previously described structures, the quantum- well HEMT [1] and the high-transconductance HEMT [2] have been tested and compared with noise parameters of a MESFET (NE67383). It was demonstrated that the cryogenic noise performance of a HEMT is dependent on light illumination and may be or may not be better than that of a MESFET, depending on the device structure. The minimum noise temperature of T/sub min/ = 10.5 +- 1.5K of the quantum-well HEMT, illuminated with light, measured at f = 8.4 GHz and T/sub a/ = 12.5K is the best yet published for field effect transistors.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1132033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1132033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
X-Band Noise Parameters of HEMT Devices at 300K and 12.5K
The four noise parameters of room-temperature and cryogenically-cooled HEMT's have been investigated. Two previously described structures, the quantum- well HEMT [1] and the high-transconductance HEMT [2] have been tested and compared with noise parameters of a MESFET (NE67383). It was demonstrated that the cryogenic noise performance of a HEMT is dependent on light illumination and may be or may not be better than that of a MESFET, depending on the device structure. The minimum noise temperature of T/sub min/ = 10.5 +- 1.5K of the quantum-well HEMT, illuminated with light, measured at f = 8.4 GHz and T/sub a/ = 12.5K is the best yet published for field effect transistors.
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