0.18µm BCD技术平台，具有同类最佳的6 V至70 V功率mosfet

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229106

H. Chou, P. Su, J. Ng, P. L. Wang, H. T. Lu, C. J. Lee, W. Syue, S. Y. Yang, Y. Tseng, C. C. Cheng, C. Yao, R. Liou, Y. Jong, J. Tsai, J. Cai, H. Tuan, Chih-Fang Huang, J. Gong

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引用次数: 19

摘要

本文提出了一个单一的BCD技术平台，该平台具有在大工作电压范围内的高性能功率器件。该平台提供6 V至70 V的LDMOS器件。所有器件的比导通电阻都比最先进的基于ic的LDMOS器件低20%至40%，鲁棒性优于方形SOA(安全操作区域)。完全隔离的LDMOS器件，其独立偏置具有电路灵活性，具有优越的比导通电阻(例如，击穿电压为39 V时为11.9 mΩ-mm2)，并且在大多数高压LDMOS器件的ID-VD饱和区出现的异常突然电流增强被显著抑制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices, in which independent bias is capable for circuit flexibility, demonstrate superior specific on-resistance (e.g. 11.9 mΩ-mm2 for breakdown voltage of 39 V). Moreover, the unusual sudden current enhancement appeared in the ID-VD saturation region of most of the high voltage LDMOS devices is significantly suppressed.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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