使用亚阈值MOS晶体管的低功耗平方和平方根电路

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441165

A. Nag, R. Paily

{"title":"使用亚阈值MOS晶体管的低功耗平方和平方根电路","authors":"A. Nag, R. Paily","doi":"10.1109/ELECTRO.2009.5441165","DOIUrl":null,"url":null,"abstract":"This paper describes how the translinear (TL) principle can be purposefully exploited for MOS transistors operating in subthreshold region. Due to the exponential current-voltage relationship of subthreshold MOS transistors, they are comparable with BJTs as far as TL principle is concerned. Here squaring and square rooting circuits are implemented using subthreshold MOS devices.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low power squaring and square root circuits using subthreshold MOS transistors\",\"authors\":\"A. Nag, R. Paily\",\"doi\":\"10.1109/ELECTRO.2009.5441165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes how the translinear (TL) principle can be purposefully exploited for MOS transistors operating in subthreshold region. Due to the exponential current-voltage relationship of subthreshold MOS transistors, they are comparable with BJTs as far as TL principle is concerned. Here squaring and square rooting circuits are implemented using subthreshold MOS devices.\",\"PeriodicalId\":149384,\"journal\":{\"name\":\"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECTRO.2009.5441165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRO.2009.5441165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文描述了如何有目的地利用在亚阈值区域工作的MOS晶体管的跨线性(TL)原理。由于亚阈值MOS晶体管的电流-电压呈指数关系，就TL原理而言，它们与bjt相当。这里的平方和平方根电路是使用亚阈值MOS器件实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low power squaring and square root circuits using subthreshold MOS transistors

This paper describes how the translinear (TL) principle can be purposefully exploited for MOS transistors operating in subthreshold region. Due to the exponential current-voltage relationship of subthreshold MOS transistors, they are comparable with BJTs as far as TL principle is concerned. Here squaring and square rooting circuits are implemented using subthreshold MOS devices.

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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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