mosfet中通道热噪声的提取

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844403

Chih-Hung Chen, M. Deen, M. Matloubian, Yuhua Cheng

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引用次数: 14

摘要

提出了一种直接从直流、散射参数和射频噪声测量中提取mosfet通道热噪声的方法。在这种提取方法中，跨导(g/sub m/)、输出电阻(R/sub DS/)、源极电阻和漏极电阻(R/sub S/和R/sub D/)由直流测量得到。从散射参数测量中提取栅极电阻(R/sub G/)，从射频噪声测量中获得等效噪声电阻(R/sub n/)。利用0.36 /spl mu/m n型MOSFET的测量数据验证了该方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extraction of the channel thermal noise in MOSFETs

An extraction method to obtain the channel thermal noise in MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. In this extraction method, the transconductance (g/sub m/), output resistance (R/sub DS/), and source and drain resistances (R/sub S/ and R/sub D/) are obtained from DC measurements. The gate resistance (R/sub G/) is extracted from scattering-parameter measurements, and the equivalent noise resistance (R/sub n/) is obtained from RF noise measurements. This method has been verified by using the measured data of a 0.36 /spl mu/m n-type MOSFET up to 18 GHz.

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ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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